应用于MEMS谐振器的跨阻放大器设计及实现  

Design and Implementation of a Transimpedance Amplifier for MEMS Oscillators

作　　者：谢勇[1] 来强涛[1] 陈华[1] 郭江飞[1] 郭桂良[1] 阎跃鹏[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2016年第5期335-340,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61234007)

摘　　要：基于微机械系统（MEMS）圆盘谐振器工作时阻抗大、振荡频率高以及寄生电容大的特点,设计实现了一款用于驱动MEMS圆盘谐振器的宽带高增益、低噪声和低功耗跨阻放大器。该放大器引入低功耗宽带电流预放大和电流电压转换级输入技术,实现了宽带低功耗下低噪声性能。并结合改进型Cherry-Hooper反相器电压放大的电路结构以获得高增益带宽积,采用4～16译码控制电流、电压偏置技术,提高调试通过率及成品率。采用TSMC 0.18μm CMOS工艺流片后,测试结果表明,跨阻增益高达73 d BΩ,-3 d B带宽为163 MHz,功耗为21.6 m W,等效输入噪声电流谱密度为14 p A/Hz,芯片面积为1 538μm×680μm。A broadband high-gain,low-noise and low-power tansimpedance amplifier for disc-like micro-electromechanical system（ MEMS） resonator was designed and realized,which was featured by the high impedance,high oscillation frequency and large parasitic capacitor. The amplifier consists of a low power broadband current pre-amplifier combined with current-to-voltage conversion stage input technique to achieve a low noise performance with the conditions of high bandwidth and low power consumption. Meanwhile, an improved Cherry-Hooper amplifier was used to achieve high gain-bandwidth product. A 4- 16 decoder was used to generate the control signal of the bias current and voltage in order to improve the debugging passing rate and the yield. This transimpedance amplifier was fabricated with TSMC 0. 18 μm CMOS process. The test results show that the transimpedance gain is up to 73 d BΩwith a- 3 d B bandwidth of 163 MHz at a power consumption of 21. 6 m W. The equivalent input noisecurrent density is 14 p A / Hz,and the overall chip area is 1 538 μm × 680 μm.

关 键 词：微机械圆盘谐振器 跨阻放大器 电流预放大 Cherry-Hooper放大器 CMOS工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]