晶硅掺镓抑制太阳电池光致衰减效应的研究  

Investigation on Supression of Light Induced Degradation Effect in Crystalline Silicon Solar Cells with Gallium Doping

作　　者：张三洋 沈鸿烈[1] 魏青竹 倪志春 邢正伟[1] 姚函妤 吴斯泰 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏省能量转换材料与技术重点实验室,南京210016 [2]中利腾晖光伏科技有限公司研发部,常熟215542

出　　处：《人工晶体学报》2016年第4期1100-1105,1114,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61176062);江苏省前瞻性联合创新项目(BY2013003-08);江苏高校优势学科建设工程资助项目;中央高校基本科研业务费(3082015NJ20150024)

摘　　要：采用掺镓晶硅和掺硼晶硅制备的寿命片和太阳电池片分别进行光致衰减实验,用WT-2000少子寿命测试仪和Halm电池电学性能测试仪等研究了它们受光照前后少子寿命和电学性能的变化。发现掺镓单晶寿命片的少子寿命衰减率比掺硼单晶寿命片低50%左右,掺镓单晶PERC电池和掺镓多晶常规电池转换效率的衰减率比掺硼单晶PERC电池和掺硼多晶常规电池分别降低3.41%和0.92%。这些结果表明晶硅太阳电池的光致衰减效应主要是晶硅中少子寿命降低导致的,晶硅掺镓后能有效抑制太阳电池的光致衰减现象。Gallium doped crystalline silicon and boron doped crystal silicon were used to prepare corresponding minority carrier lifetime samples and solar cells. The lifetime and electrical property change of those samples after illumination were studied by using the WT-2000 lifetime tester and the Halm electrical properties tester. The results showed that the lifetime decay ratio of the gallium doped sc-Si is reduced by50% than that of conventional boron doped sc-Si. It was also demonstrated that the decay ratios of the gallium doped sc-Si PERC cells and gallium doped mc-Si cells is 3. 41% and 0. 92% lower than those of boron doped sc-Si PERC cells and mc-Si cells. It is concluded that the LID effect is caused by the decrease of the lifetime in crystalline silicon,and the effect can be effectively suppressed by gallium doping.

关 键 词：光致衰减效应 晶硅太阳电池 掺镓晶硅 少子寿命 衰减率 

分 类 号：TM914[电气工程—电力电子与电力传动]