基于无源缓冲法和延时控制的IGBT模块串联均压技术  

Voltage Grading Technology of IGBT Serial Models Based on Passive Snubbing Circuit and Time-delay Control

作　　者：范镇淇 耿铨 侯凯 李伟邦 

机构地区：[1]南京南瑞集团,南京210003 [2]国网南京供电公司,南京210000

出　　处：《高压电器》2016年第5期65-71,共7页High Voltage Apparatus

基　　金：江苏省自然科学基金项目(BK20140118);国网电力科学研究院科技项目(524600130013;524600130014);国家电网公司科技项目~~

摘　　要：绝缘栅双极型晶体管IGBT综合了GTR和MOSFET的优点,近年来,在电力电子领域得到了广泛的运用。受限于单只器件的耐压水平,在高压大功率领域,IGBT模块直接串联技术是一个简单、经济的使用方案。为了保证IGBT器件的安全使用,如何解决串联均压是关键。文中提出了一种基于无源缓冲电路和栅极延时控制的均压策略,从技术原理上对其进行了详细的阐述,并通过DC15 k V/300 A脉冲实验予以了验证,实验结果显示,该技术能够实现良好的串联均压,抑制IGBT关断电压过冲,具备了一定的工程运用价值。Isolate gate bipolar transistor（IGBT）combines the advantage of the GTR and MOSFET,which has been widely used in power electronic area. However, due to the limited voltage level of single IGBT, serial connection of IGBTs is a good solution in high voltage area. In order to guarantee the safety of IGBT, it must to ensure the voltage balance of the serial connecting IGBTs. This paper presents a voltage grading strategy based on passive snubber circuit and time-delay control,the principle has been discussed in detail,and the result of DC15 k V/300 A pulse experiment is also given. The experimental results show that the technology can achieve good series voltage grading, limit the voltage overshoot when IGBT shutdown. It can be useful for engineering application.

关 键 词：IGBT串联 无源缓冲电路 延时控制 均压 

分 类 号：TN322.8[电子电信—物理电子学]