磁控溅射制备高质量Fe_(20)Ni_(80)薄膜（英文）  

Preparation of High-Quality Fe_(20)Ni_(80) Film by Magnetron Sputtering

作　　者：王娇[1] 张艺超[2] 杨建红[1] 

机构地区：[1]兰州大学微电子研究所,兰州730000 [2]兰州大学磁学与磁性材料教育部重点实验室,兰州730000

出　　处：《微纳电子技术》2016年第6期364-368,共5页Micronanoelectronic Technology

摘　　要：采用磁控溅射的方法制备了高质量的铁镍合金(Fe_(20)Ni_(80))软磁性薄膜,探究了制备过程中溅射条件对Fe_(20)Ni_(80)薄膜质量的影响,包括溅射气压、溅射功率、退火温度和薄膜厚度等。这些条件或改变了溅射时的溅射速率,或改变了溅射出来的粒子的平均自由程,进而影响制备的Fe_(20)Ni_(80)薄膜的性质,包括薄膜晶粒取向、各向异性磁电阻及垂直各向异性等。通过分别改变薄膜制备过程中的工作气压、溅射功率、退火温度及薄膜厚度等,制备了具有高的各向异性磁电阻、低垂直各向异性和很小的矫顽力的Fe_(20)Ni_(80)薄膜,为下一步制备基于Fe_(20)Ni_(80)薄膜的自旋整流器件提供了工艺基础。The high-quality Fe_（20）Ni_（80） soft magnetic film was prepared by the magnetron sputtering method.The effects of the sputtering conditions on the quality of the Fe_（20）Ni_（80） film were investigated,including the sputtering gas pressure,sputtering power,annealing temperature and film thickness.These factors either change the sputtering rate or change the mean free path of sputtered particles,thus affec-ting the quality of the prepared Fe_（20）Ni_（80） film,including the grain orientation,anisotropic magnetoresis-tance（AMR）,vertical anisotropy,etc.The Fe_（20）Ni_（80） films with high anisotropic magnetoresistance,low vertical anisotropy and small coercivity were prepared by changing the sputtering gas pressure,sputtering power,annealing temperature and film thickness,providing a technology foundation for preparing spin rectifier devices based on Fe_（20）Ni_（80） films.

关 键 词：Fe_(20)Ni_(80)薄膜 磁控溅射 各向异性磁电阻(AMR) 软磁性薄膜 自旋整流器件 

分 类 号：TN304.7[电子电信—物理电子学]