压接型IGBT封装寄生参数对芯片开通过程中的均流影响分析  

Analysis of the Influence of Package Parasitic Parameters on Current Balance Between Chips During Turn-on Inside a Press-pack IGBT

作　　者：张睿 赵志斌 陈中圆 张朋 崔翔 

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206 [2]全球能源互联网研究院,北京市昌平区102209

出　　处：《智能电网》2016年第4期361-366,共6页Smart Grid

基　　金：国家自然科学基金项目(51477048);国家电网公司科技项目:2 500 V/600 A压接式IGBT模块关键技术研究(SGRI-WD-71-13-006)~~

摘　　要：在压接型绝缘栅双极型晶体管(press-pack IGBT)模块内部,封装寄生参数会对芯片开通过程中的均流产生影响,找出影响较大的寄生参数并在封装设计时加以改进就显得十分必要。在分析压接型IGBT模块中封装寄生参数来源的基础上,根据有限元软件对封装寄生参数的提取结果,初步建立封装电路模型。以典型的电力电子变换电路Boost电路为例进行仿真,分析压接型IGBT模块的封装寄生参数对模块内部开通过程中均流的影响。仿真结果表明,不同的寄生参数对模块内部均流特性的影响不同,初步找出影响较大的寄生参数,并为封装设计提供参考。Inside a press-pack IGBT（PPI） module, its package parasitic parameters have influence on the current balance between chips during turn-on transient, so it is quite necessary to find out the parasitic parameters which have larger influence and improve them during package design. Based on the analysis of the sources of its package parasitic parameters, a preliminary package circuit model is established according to the extraction results of parasitic parameters by the finite element software. In the Boost circuit, the simulation is carried out to analyze the influence of package parasitic parameters inside a PPI on current balance during turn-on. It can be concluded from the simulation results that different parasitic parameters have different influence on current balance inside the module, and the parameters which have larger influence on current balance have been found out. Also, the design tips for package design are listed.

关 键 词：绝缘栅双极型晶体管 压接封装 寄生参数 均流 

分 类 号：TN322.8[电子电信—物理电子学]