An LDMOS with large SOA and low specific on-resistance  

作　　者：杜文芳 吕信江 陈星弼 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2016年第5期52-55,共4页半导体学报（英文版）

基　　金：Project supported in part by the National Natural Science Foundation of China(No.51237001)

摘　　要：An LDMOS with nearly rectangular-shape safe operation area （SOA） and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be low- ered down to 74.7 m^2.cm2 for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ion- ization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large V6s is obtained and snap-back is suppressed as well.An LDMOS with nearly rectangular-shape safe operation area （SOA） and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be low- ered down to 74.7 m^2.cm2 for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ion- ization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large V6s is obtained and snap-back is suppressed as well.

关 键 词：LDMOS safe operation area （SOA） snap-back split gate 

分 类 号：TN386[电子电信—物理电子学]