掺氮WO_3电致变色薄膜及器件的制备与性能  

Preparation and properties of N-doped WO_3 electrochromic thin film and device

作　　者：王伟[1] 李合琴[1] 陶磊[1] 乔恺 黄依琴[1] 李世伟[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2016年第5期608-612,共5页Journal of Hefei University of Technology：Natural Science

基　　金：安徽省高校自然科学基金资助项目(KJ2009A091;KJ2012A228);中央高校基本科研业务费专项资金资助项目(103-4115100010)

摘　　要：文章在氧化铟锡(indium tin oxide,ITO)玻璃上用反应磁控溅射法制备了氮掺杂WO_3薄膜和TiO_2薄膜,并封装制成电致变色器件。用X-ray衍射仪、原子力显微镜、X射线光电子能谱仪对薄膜的结构、形貌、成分和结合键进行表征;采用直流稳压电源和分光光度计对器件的透光变色性能进行测试。结果表明:制备的掺氮WO_3薄膜为非晶态,其非晶衍射包的峰位随着含N量的增加而移动;随着WO_3薄膜中含N量的升高,表面粗糙度增大,器件在着色态透光率降低;掺氮WO_3薄膜中W、O分别以W^(6+)和O^(2-)存在,而N以中性价态、代换O位与W键合以及表面吸附3种状态存在。当掺氮量为2.80%时,电致变色器件调制幅度最大,适用于节能玻璃。N-doped tungsten oxide（WO3 ：N） and TiO2 thin films were prepared on indium tin oxide（ITO） coated glass substrate by reactive magnetron sputtering and assembled into electrochromic devices. The structure, surface morphology, composition and chemical bonds of films were characterized by XRD, AFM and XPS, respectively. The electrochromic properties of the devices were investigated by DC regulated power supply and spectrophotometer. The results indicate that WO3：N films are amorphous, whose scattering peaks move as N content increases. With the increase of N content of WO3 ：N film, the film surface gets rougher, and this will decrease the transmittance of the device in bleached state. W and O elements exist in W^6＋ and O^2- , respectively, whereas there are three chemical states for N element, namely neutral atom, substituting O in W-O bond, and absorption onto film surface during deposition. The device reaches the largest modulating extent as the N content is 2. 800%, which is suitable for energy conservation glass.

关 键 词：掺氮WO3薄膜 反应磁控溅射 电致变色器件 

分 类 号：TB43[一般工业技术]