离子注入制备Al_2O_3阻氚涂层中氧元素分布的研究  

Depth Profile of Oxygen Density in Tritium Permeation Barrier of Ion-Implanted Al_2O_3 Coatings

作　　者：冯军[1,2] 金凡亚[1] 陈美艳[1] 但敏[1] 沈丽如[1] 童洪辉[1] 李炯[1] 赖新春[3] 

机构地区：[1]核工业西南物理研究院,成都610041 [2]南华大学,衡阳421001 [3]中国工程物理研究院,绵阳621907

出　　处：《真空科学与技术学报》2016年第5期504-509,共6页Chinese Journal of Vacuum Science and Technology

基　　金：ITER计划国内配套专项课题(2013GB110006);国家自然科学基金项目(11305054;11305055)

摘　　要：对离子注入制备Al_2O_3涂层中的氧元素分布进行了分析,研究在不同加速电压、剂量离子注入参数下,氧元素的深度、浓度的变化规律,并根据相关规律对涂层进行了优化。结果表明:在单一加速电压下,氧元素分布符合准高斯分布;加速电压的增大将使氧元素分布深度变大,但浓度分布梯度将变小。在剂量达到8×1017ions/cm^2及以上时,由于离子注入使晶粒纳米化,氧元素浓度分布变得很均匀。通过以上分析,进行了叠加注入优化氧元素分布,具体参数为:加速电压分别为30,50,70 k V,剂量分别为2.5×1017,2×1017,3.5×1017ions/cm^2,测试结果表明,浓度分布更均匀,阻氚性能也得到较大提高。The Al2O3 coatings,as the tritium permeation barrier,were deposited by oxygen ion implantation onthe substrate of Al-plated 316 L stainless steel. The impact of the O-dosage and acceleration voltage on the depth profile of oxygen density was investigated with scanning electron microscopy and Auger electron spectroscopy. The results show that the voltage and O-dosage strongly affect the homogeneity and depth profile of the O-density. For example,driven by a single voltage,the depth profile of O-density followed Gauss law;as the voltage increased,the penetration depth of O-ions increased,but the O-density sharply decreased. As the O-ion dose increased up to 8 ×1017ions / cm2,the depth profile of O-density was increasingly homogeneous because the implanted O-ions enhanced formation of Al2O3nano-grains. Synthesized by superposed O-ion implantation at 30 k V /2. 5 × 1017 ions / cm2,50 k V /2 × 1017 ions / cm2 and 70 k V /3. 5 × 1017 ions / cm2,respectively;the Al2O3 coatings with fairly homogenous Odensity display better tritium permeation resistance.

关 键 词：离子注入 氧元素分布 加速电压 剂量 

分 类 号：TB43[一般工业技术]