激光频率对激光溅射法制备多晶硅薄膜压阻特性的研究  

Influence of Pulse Frequency on Piezo-resistive Property of Pulsed-Laser Deposited Poly-Silicon Coatings

作　　者：骆旭梁 付传起[1] 雍帆 王宙[1] 王思源[1] 

机构地区：[1]大连大学表面工程中心,大连116622

出　　处：《真空科学与技术学报》2016年第5期534-537,共4页Chinese Journal of Vacuum Science and Technology

基　　金：金州新区科技计划高新技术研究开发计划.培育专项(2013-GX1-002)

摘　　要：采用脉冲激光溅射法制备硼掺杂多晶硅薄膜,研究了不同频率下多晶硅薄膜的晶粒尺寸以及压阻性能。用扫描电子显微镜表征在不同的激光频率沉积的多晶硅薄膜的表面形貌,以及悬臂梁实验测定在不同的激光频率下沉积的多晶硅薄膜的应变系数。结果表明溅射频率对激光溅射法制备的硼掺杂多晶硅薄膜的晶粒尺寸和压阻性能都有着明显的影响,当频率为3 Hz时多晶硅薄膜的晶粒尺寸较大,约为35-65μm,并且多晶硅薄膜有着良好的压阻性能,其应变系数为36.8,电阻的温度系数为-0.036%/℃,应变系数的温度系数为-0.09%/℃。The boron-doped poly-silicon thin films were synthesized by pulsed laser deposition（ PLD） on substrate of Si O2 covered Si（100）. The effect of the pulse frequency on the piezoresistiveproperties and grain-size of the B-doped poly-Si coatings was investigated with scanning electron microscopy and izod impact test. Results show that the pulse frequency has a major impact on the piezoresistivebehavior and grain-size of the B-doped poly-Si coatings.To be specific,as the pulse frequency increased from 1 to 4 Hz,the gauge factor changed in an increase-decrease mode,peaking at 3 Hz;and the grain-size decreased slowly. Deposited at 3 Hz and at a B-content of 15%（ at）. for2 h,the longitudinal gauge factor was 36. 8 and the grain-size was in 35 - 65 μm range,and the temperature coefficients of the resistivity and gauge factor were estimated to be-0. 036% / ℃ and-0. 09% / ℃,respectively. Possible mechanisms responsible for the observation were tentatively discussed.

关 键 词：脉冲激光溅射 激光频率 多晶硅薄膜 应变系数 晶粒尺寸 

分 类 号：TQ174[化学工程—陶瓷工业]