ICPECVD法制备氧化硅薄膜的工艺研究  

Study on Silicon Oxide Films Deposition Process by ICPECVD

作　　者：刘雨涛[1] 梁庭[1] 王心心[1] 王涛龙 张瑞[1] 熊继军[1] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,电子测试技术国防科技重点实验室,山西太原030051

出　　处：《仪表技术与传感器》2016年第4期13-14,39,共3页Instrument Technique and Sensor

基　　金：国家杰出青年科学基金资助项目(51425505)

摘　　要：以SH_4和O_2作为反应气体,利用电感耦合等离子体增强型化学气相淀积(ICPECVD)技术制备了氧化硅薄膜,通过正交试验设计的方法研究了反应室压强、衬底温度和射频功率3个关键工艺参数对氧化硅薄膜淀积速率的影响及其显著性。实验结果表明:反应室压强和射频功率对淀积速率的影响具有高度显著性,各参数对刻蚀速率的影响程度依次为反应室压强>射频功率>衬底温度,并讨论了所选参数对淀积速率的影响机理。SH_4 and O_2 were selected as the reaction gas,silicon oxide films were prepared by inductively coupled plasma- enhanced chemical vapor deposition（ ICPECVD） technology. The influence and significance of the three key process parameters including reaction chamber pressure,substrate temperature and RF power on the deposition rate of silicon oxide films were investigated by the orthogonal experiment design method. The experimental results show the influence sequence on the deposition rate of silicon oxide films presents as reaction is chamber pressure 〉RF power 〉substrate temperature and the influence principle of different factors on the deposition rate of silicon oxide films was discussed.

关 键 词：等离子体增强型化学气相淀积 氧化硅薄膜 正交试验 淀积速率 

分 类 号：TN304[电子电信—物理电子学]