硒化镉晶体生长及性能表征  

Growth and Properties Characterization of Large Size Cdse Single Crystals

作　　者：张颖武[1] 李晖[1] 程红娟[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《压电与声光》2016年第3期427-429,共3页Piezoelectrics & Acoustooptics

基　　金：国家重点基金资助项目

摘　　要：硒化镉(CdSe)是一种性能优异的Ⅱ-Ⅵ族半导体材料。采用气相法生长出CdSe晶体材料,结合晶体生长动力学研究了CdSe单晶生长速率,并对其晶体结构和光学性能进行了表征。Raman测试表明生长的CdSe晶体为纤锌矿结构,属于极性材料。XRD测试表明单晶生长面为(001)面,衍射峰的半高宽较小。光学性能测试表明,CdSe材料在近红外波段内具有较好的光学透过特性。Cadmium Selenium（CdSe）is an important II-VI semiconductor material with excellent properties.The CdSe single crystal was grown by the vapor phase growing technique,and the growth rate was studied from the crystal growth kinetics,then the crystal structure and optical properties of the crystal material were characterized.The Raman spectrum show that the CdSe crystal is a polar material with wurtzite structure.XRD spectrum show that the crystal growth surface is（001）surface,and the FWHM value of diffraction peak is small.The optical test shows that the CdSe has good optical transmission properites in the near-infrared band.

关 键 词：硒化镉(CdSe) 晶体 拉曼(Raman) X线衍射(XRD) 

分 类 号：TM22[一般工业技术—材料科学与工程] O782.7[电气工程—电工理论与新技术]