ZnO纳米线阵列/PVK光电二极管制备与特性  

Fabrication and characteristics of the ZnO nanowire array/PVK photodiode

作　　者：袁兆林[1] 王燕[1] 何龙旺 任亚杰[1] 帅春江[1] 

机构地区：[1]陕西理工学院物理与电信工程学院,陕西汉中723000

出　　处：《陕西理工学院学报（自然科学版）》2016年第3期83-86,92,共5页Journal of Shananxi University of Technology:Natural Science Edition

基　　金：陕西省教育厅自然科学专项科研计划项目(15JK1147);汉中市科技发展计划项目(2014ZKC47-01);大学生创新创业训练计划项目(UIRP15084)

摘　　要：采用水热方法在氧化铟锡（ITO）涂覆的玻璃基底上生长出良好取向排列的氧化锌（ZnO）纳米线阵列,采用场发射扫描电子显微镜（FESEM）、X射线衍射仪（XRD）分别测试ZnO纳米线阵列的形貌和晶相结构。测试结果表明：在基底上形成致密、良好取向排列的ZnO纳米线阵列,纳米线的直径为40～50 nm,长度在200～300 nm,具有六方纤锌矿结构。进一步与p型聚乙烯咔唑（PVK）混合,形成p-n异质结器件,研究该器件在暗态和光照下的电流密度-电压（J-V）特性。结果显示：该器件为光电二极管,在暗态和光照下的整流率分别为216和110。Well-aligned ZnO nanowire arrays were grown on indium tin oxide（ ITO）-coated glass substrates by hydrothermal technique in this paper. The morphologies and crystalline structure of as-grown ZnO nanowire arrays were examined by field-emission scanning-electron microscopy（ FESEM） and X-ray diffraction（ XRD）,respectively. The results of these measurements showed the ZnO nanowire arrays contained densely packed,aligned nanowires with diameters from 40 to 50 nm,lengths from 200 to 300 nm and a wurtzite structure. Moreover,ZnO nanowire arrays / PVK p-n heterojunction device was produced using as-grown ZnO nanowire arrays combination with p-type poly（ 9-vinayl carbazole）（ PVK）. The current density-voltage（ J-V） characteristics of the device in the dark and under illumination were investigated in detail. The results exhibited that the device was a photodiode,the rectification ratios（ RR） of the device in the dark and under illumination were 216 and 110,respectively.

关 键 词：ZNO纳米线阵列 水热法 光电二极管 整流率 

分 类 号：O475[理学—半导体物理]