P3HT有机压阻器件受黏弹性的影响及其机械性能改进  

The Impact of Viscous Flow of P3HT Film and the Improvement in Its Mechanical Characteristics

作　　者：高磊[1] 田益明[1] 侯伟[1] 闫伟青 钟高余[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《复旦学报（自然科学版）》2016年第2期143-149,共7页Journal of Fudan University：Natural Science

基　　金：国家自然科学基金(51373036;11134002);上海市自然科学基金(12ZR1402400)

摘　　要：制备了ITO\P3HT(100 nm)\Al(70 nm)结构的有机压阻器件,并测试了其在不同压力下的I-V特性,发现了承压后动态电学特性不同的两种类型的压阻器件,且两种压阻器件都表现出负压阻特性.现认为器件类型的分化可能是由于P3HT黏流形变的作用.为了减小黏流形变和改善薄膜弹性,提出了一种薄膜制备改进工艺:真空快速成膜工艺和退火处理,二者结合可以提高薄膜的杨氏模量,减小薄膜的黏流形变,提高其机械性能稳定性,有助于稳定压阻器件的性能,拓宽传感器的量程.The piezoresistive device with the structure of ITO／P3HT（100 nm）／A1（70 nm） was prepared and its I- V characteristics under different stresses were tested. Two types of devices with different dynamic electrical characteristic were found. The differentiation of the devices may be due to the existed deformation resulting from viscous flow in the P3HT film. Thus a method has been tried in the present work to decrease the viscous flow deformation and improve the mechanical characteristics of P3HT film. The method is fast volatilizing of solvent in vacuum to form drop-cast film and the next process of annealing. Through this method, the viscous flow deformation of the P3HT film can be reduced, which will benefit the mechanical characteristics of the P3HT film and thus the stability and repeatability of the performance of the piezoresistive sensors with P3HT film.

关 键 词：P3HT 压阻器件 黏流形变 真空快速成膜 退火 杨氏模量 

分 类 号：O47[理学—半导体物理]