硅光电倍增器在剂量测量中的应用现状与前景  

Application Status and Perspective of Silicon Photomultiplier in Dose Measurement

作　　者：陈法国[1] 韩毅[1] 于伟跃 沈华亚[1] 

机构地区：[1]中国辐射防护研究院,太原030006

出　　处：《核电子学与探测技术》2016年第1期82-86,共5页Nuclear Electronics & Detection Technology

摘　　要：本文介绍了最近发展的新型硅光电倍增器(SiPM)在剂量测量中的应用现状和前景,分析了其暗计数率高(室温下0.1~10 MHz/mm^2)、对温度敏感、动态范围有限(通常只有2~3个量级)等问题。基于体积小、工作电压低、对磁场不敏感、增益高等特点,硅光电倍增器很适合代替传统的光电倍增管用于便携式剂量仪表。目前,利用脉冲幅度甄别、温度漂移实时修正的方法,可以有效地降低暗计数率高、温度敏感性的影响;但是,即便采用了符合测量、组合探测器等方法,测量范围仍然是限制SiPM在剂量测量应用的主要问题。This paper introduces the application status and perspective of silicon photomultiplier（ SiPM） in dose measurement. SiPM is a novel device developed in recent years,with its drawbacks of high dark rate（ 0.1 - 10MHz / mm-2 in room temperature）,sensitivity to temperature,limited dynamic range（only 2 - 3 orders of magnitude）,and so on. SiPM is suitable for replacement of traditional photomultiplier tube in development of portable dosimeters because of its small size,low operating voltage,insensitivity to magnetic field and high gain. At present,the drawbacks of high dark rate and sensitivity to temperature can be reduced effectively,by using amplitude discrimination and real- time compensation of temperature drift instability respectively. Although the methods of coincidence measurement and combined detector are used to widen the measurement range,it is still the main limitation of SiPM in dose measurement.

关 键 词：硅光电倍增器 剂量测量 温度特性 辐照效应 

分 类 号：TL81[核科学技术—核技术及应用]