氧化物薄膜晶体管研究进展  

Research progress on oxide-based thin film transisitors

作　　者：兰林锋[1] 张鹏[1] 彭俊彪[1] 

机构地区：[1]华南理工大学,发光材料与器件国家重点实验室,广州510640

出　　处：《物理学报》2016年第12期1-22,共22页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2014AA033002);国家重点基础研究发展计划(批准号:2015CB655000);国家自然科学基金(批准号:61204087,51173049)资助的课题~~

摘　　要：氧化物半导体材料因其载流子迁移率高、制备温度低、电学均匀性好、对可见光透明和成本低等优势,被认为是最适合驱动有机发光二极管的薄膜晶体管(TFT)的半导体有源材料之一.目前氧化物TFT已成功地应用在平板显示的驱动背板上.本文从氧化物TFT的历史和发展状况出发,先介绍了氧化物半导体材料及其载流子输运机理,然后详细介绍了氧化物TFT的结构、制备方法以及电学稳定性。Oxide semiconductor is regarded as one of most suitable active materials of thin-film transistors（TFTs） for driving organic light-emitting diodes because of its advantages of high mobility, low-temperature processing, good electrical uniformity, visible-light transparency, and low cost. Currently oxide TFTs have been successfully applied to the backplanes of the flat-panel displays. This review gives a comprehensive understanding of the development process of oxide TFTs. In the present article, we review the major trend in the field of oxide TFTs. First, the questions of how to achieve high-mobility and high-stability oxide semiconductors are introduced, and the carrier transport mechanism is also addressed. Next, the device structures and the fabrication processes of the oxide TFTs are introduced. The electrical instability of the oxide TFTs is also discussed, which is critical for their applications in backplanes of the flat-panel displays. Especially, the mechanism of the threshold voltage instability of the oxide TFTs under negative bias illuminant stress is discussed in detail. Finally, the applications of oxide TFTs in flat-panel displays, such as active matrix organic light-emitting diodes and flexible displays, are addressed.

关 键 词：薄膜晶体管 输运机理 制备 稳定性 

分 类 号：TN321.5[电子电信—物理电子学]