压阻式MEMS高温压力传感器设计与关键工艺研究  

Design and Key Process Research of Pizeoresistive MEMS High Temperature Pressure Sensor

作　　者：李丹丹[1] 梁庭[1] 李赛男[1] 姚宗[1] 熊继军[1] 

机构地区：[1]中北大学电子测试技术重点实验室仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《仪表技术与传感器》2016年第5期9-11,共3页Instrument Technique and Sensor

摘　　要：在SIMOX技术SOI晶圆的基础上,设计了压力敏感芯片结构,并基于MEMS工艺制作了压力敏感芯片。根据芯片实际情况,分析了传感器制备过程的关键工艺参数及其影响。同时采用5 V恒压源供电,在相同情况下,增加kulite压力传感器背靠背测量不同气压下的输出电压值并比较。测量结果表明,所制备的SOI压力传感器线性度达到0.99%,重复性高达0.35%,迟滞性为0.1%,有望用到实际工程应用中。On the basis of SOI wafer made by SIMOX technology,the structure of the pressure sensitive chip was designed,and the pressure sensitive chip was prepared based on MEMS technology. According to the actual situation of the chip,the key process parameters and their influence on the preparation process of the sensor were analyzed. Powered by 5V constant voltage source at the same time,and the kulite pressure sensor was added to measure and compare the output voltage values under different pressures in a back-to-back mode in the same case. The result shows that the linearity of the SOI pressure sensor is 0. 99% and the repeatability is as high as 0. 35%,the hysteresis is 0. 1%,which is expected to be used in the practical engineering application.

关 键 词：SOI(绝缘体上硅) 压力敏感芯片 关键工艺 kulite压力传感器 背靠背测量 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]