Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of In GaN/GaN quantum wells in laser diode structures  

作　　者：曹文彧 胡晓东 

机构地区：[1]State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics,Peking University

出　　处：《Chinese Optics Letters》2016年第6期55-59,共5页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61334005,51272008,and51102003);the National Basic Research Program of China(No.2012CB619304)

摘　　要：Measurements of the excitation power-dependence and temperature-dependence photoluminescence（PL） are performed to investigate the emission mechanisms of In Ga N/Ga N quantum wells（QWs） in laser diode structures. The PL spectral peak is blueshifted with increasing temperature over a certain temperature range. It is found that the blueshift range was larger when the PL excitation power is smaller. This particular behavior indicates that carriers are thermally activated from localized states and partially screen the piezoelectric field present in the QWs. The small blueshift range corresponds to a weak quantum-confined Stark effect（QCSE） and a relatively high internal quantum efficiency（IQE） of the QWs.Measurements of the excitation power-dependence and temperature-dependence photoluminescence（PL） are performed to investigate the emission mechanisms of In Ga N/Ga N quantum wells（QWs） in laser diode structures. The PL spectral peak is blueshifted with increasing temperature over a certain temperature range. It is found that the blueshift range was larger when the PL excitation power is smaller. This particular behavior indicates that carriers are thermally activated from localized states and partially screen the piezoelectric field present in the QWs. The small blueshift range corresponds to a weak quantum-confined Stark effect（QCSE） and a relatively high internal quantum efficiency（IQE） of the QWs.

关 键 词：confined Stark piezoelectric excitation thermally partially tempera fitting screening attributed 

分 类 号：O471.1[理学—半导体物理]