Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition  

作　　者：任鹏 韩刚 付丙磊 薛斌 张宁 刘喆 赵丽霞 王军喜 李晋闽 

机构地区：[1]Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences [2]State Key Laboratory of Solid State Lighting,Chinese Academy of Sciences [3]Schools of Materials Science and Engineering,University of Science and Technology Beijing [4]Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2016年第6期145-149,共5页中国物理快报（英文版）

基　　金：Supported by the Key Program of the National Natural Science Foundation of China under Grant No 61334009;the National High Technology Research and Development Program of China under Grant No 2014AA032604

摘　　要：CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

关 键 词：of or IS as RATE GAN Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition by with 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O614.371[理学—无机化学]