Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes  

作　　者：徐明升 张恒 周泉斌 王洪 

机构地区：[1]Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics,South China University of Technology [2]State Key Laboratory of Crystal Materials, Shandong University

出　　处：《Optoelectronics Letters》2016年第4期249-252,共4页光电子快报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2014AA032609);the National Natural Science Foundation of China(Nos.61504044,61404050 and 51502156);the China Postdoctoral Science Foundation(Nos.2015M582384 and 2016T90782);the Major Scientific and Technological Special Project of Guangdong Province(No.2014B010119002);the Fundamental Research Funds for the Central Universities(No.2015ZM074);the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University(No.LH20157221)

摘　　要：The influence of p-type Ga N(p Ga N) thickness on the light output power(LOP) and internal quantum efficiency(IQE) of light emitting diode(LED) was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pG a N increases by 30.9% compared with that of the conventional LED with 300-nm-thick p Ga N. The variation trend of IQE is similar to that of LOP as the decrease of Ga N thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick p Ga N is ascribed to the improvements of the carrier concentrations and recombination rates.

关 键 词：EFFICIENCY Gallium alloys Gallium nitride Optical properties 

分 类 号：TN312.8[电子电信—物理电子学] O242.23[理学—计算数学]