AgGaS_2多晶合成工艺改进研究  

Study on Improved Synthesis Technology of AgGaS_2 Polycrystal

作　　者：吴小娟[1] 赵欣[1] 

机构地区：[1]中国民用航空飞行学院,广汉618307

出　　处：《人工晶体学报》2016年第6期1608-1610,1618,共4页Journal of Synthetic Crystals

基　　金：四川省科技厅基金(2015ZR0034);中国民用航空飞行学院科研基金(J2014-92)

摘　　要：按同成分熔化点配料,采用改进了合成温控条件的双温区气相输运法成功合成出AgGaS_2多晶原料,通过精确控温,有效避免了反应过程中由S蒸汽压过大引发的合成石英安瓿炸裂,提高了AgGaS_2多晶合成的质量和成功率。经过XRD、DSC测试分析,结果表明:经改进方法合成的AgGaS_2多晶材料是高纯单相、均匀致密的,为高质量AgGaS_2单晶的生长提供了优质原料。AgGaS2 polycrystalline materials with the congruentmelt composition were synthesized by modified two-temperature zone vapor transport method. It can effectively avoid explosion of the quartz ampoule during synthesis. Modified method also improves synthesis output. XRD and DSC results show that the synthesized polycrystals have high-purity,homogeneous,compact and single-phase. These results demonstrate that modified synthesis method is a simple and preferable method for AgGaS2 polycrystal synthesis and can laid a reliable foundation for the single crystal growth.

关 键 词：硫镓银 多晶合成 双温区 

分 类 号：O77[理学—晶体学]