Ni_2O_3掺杂对SnO_2-Zn_2SnO_4复合陶瓷电学性质的影响  

Effect of Ni_2O_3 Doping on Electrical Properties of SnO_2-Zn_2SnO_4 Composite Ceramics

作　　者：周锋子[1] 王丹丹[1] 王晓飞[1] 臧国忠[1] 

机构地区：[1]河南科技大学物理工程学院,河南洛阳471023

出　　处：《河南科技大学学报（自然科学版）》2016年第5期7-10,3,共4页Journal of Henan University of Science And Technology:Natural Science

基　　金：国家自然科学基金项目(11504090);河南科技大学高级别科研培育基金项目(2015GJB014)

摘　　要：采用传统陶瓷工艺制备了Ni_2O_3掺杂的SnO_2-Zn_2SnO_4复合陶瓷,并测试了样品的压敏性质和介电频谱。压敏性质测试结果表明:随着Ni_2O_3掺杂量的增加,样品的非线性系数先减小后增大,压敏电压先升高后降低。当掺杂0.45%mol Ni_2O_3时,样品的非线性系数最小值为3.8,压敏电压最高值为63 V/mm。介电频谱显示:随着测试频率的增加,所有样品的相对介电常数εr均明显降低。低频下,样品的相对介电常数随着Ni_2O_3掺杂量的增加先减小再增大。当不掺杂Ni_2O_3,测试频率为40 Hz时,样品的相对介电常数达7 000左右,而其介电损耗却为最低值。Ni_2O_3掺杂引起SnO_2-Zn_2SnO_4复合陶瓷微观结构改变,从而使其压敏性质和介电性质改变。Ni_2O_3 doped SnO_2-Zn_2SnO_4composite ceramics were prepared by using the traditional ceramic process. The varistor properties and dielectric spectra of samples were tested. The measurement results of varistor property show that with the increase of Ni_2O_3 doped content,the nonlinear coefficient is decreased and then increased. Whereas,the breakdown electrical field increases sharply followed by decreasing. When 0. 45%mol Ni_2O_3 is doped,the nonlinear coefficient and breakdown electrical field reach the minimum of 3. 8 and the maximum of 63 V / mm respectively. The dielectric spectra shows that the relative dielectric constant εr obviously decreases with the increase of testing frequency. At low frequency,the relative dielectric constant decreases and then increases with the increase of Ni_2O_3 doped content. At frequency of 40 Hz,the sample without Ni_2O_3 exhibits the highest value of relative dielectric constant about 7 000 and maintains the lowest dielectric loss. The microstructure variation caused by Ni_2O_3 dopant is the main reason for the changing of varistor and dielectric properties.

关 键 词：压敏陶瓷 微观结构 非线性系数 压敏电压 

分 类 号：TM28[一般工业技术—材料科学与工程]