CZ法硅单晶生长电阻网络建模及MPC仿真分析  

Modeling based on resistive network and simulation of MPC method on Czochralski growth process

作　　者：弋英民[1] 张潼[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《西安理工大学学报》2016年第2期142-148,206,共8页Journal of Xi'an University of Technology

基　　金：国家重点基础研究发展计划973项目资助(2014CB360508);国家自然科学基金资助项目(61533014);陕西省教育厅科研资助项目(16JS069)

摘　　要：CZ法硅单晶生长系统具有强非线性及大滞后的特点。本文就该系统建立了传热传质的低阶模型,计算了该模型在初始条件下的稳态解,并进行线性化处理及分析,根据系统的可控性及稳定性确定控制策略,并设计控制器。结果表明:在低阶模型中,采用Gevelber提出的简化辐射角系数能较好的反映工业中晶体生长过程特性;系统线性化后的性能分析表明,仅将加热器功率作为输入时,系统是不可控不稳定的,故采用模型预测控制算法作为控制策略,设计了无干扰无延迟的无约束模型预测控制器和无干扰有延迟的无约束模型预测控制器,仿真结果验证了所设计的方法的有效性。For strong nonlinear with large delay on CZ growth process of silicon, the model based on the heat and mass transfer phenomenon is developed. The steady state solutions in the initial conditions are calculated, linearization and analysis of system model are conducted, with control algorithm and designing determined and the controller based on the controllability and stability of the system designed. It is concluded that the simplifications in radiation view factors given by Gevelber can reflect the characteristics of crystal growth in industry. Moreover, the analysis of system performance indicates that the system is uncontrollable and unstable on the premise of heater power as the input, thus using the model predictive control algorithm as the control strate- gy. Then the unconstrained MPC is designed for the nominal, delay-free, linearized system and the unconstrained MPC for the nominal, delay, linearized system, with the result that verifies the validity of these methods.

关 键 词：单晶硅 CZ法 电阻网络类比 低阶模型 模型预测控制 

分 类 号：O782.5[理学—晶体学]