雪崩模式下的体结构GaAs光导开关  

GaAs bulk PCSS under avalanche mode

作　　者：吴朝阳[1] 范昭奇[1] 陆巍[1] 杨周炳[1] 罗剑波[2] 

机构地区：[1]中国工程物理研究院应用电子学研究所高功率微波技术重点实验室,四川绵阳621999 [2]中国工程物理研究院电子工程研究所,四川绵阳621999

出　　处：《太赫兹科学与电子信息学报》2016年第3期340-343,共4页Journal of Terahertz Science and Electronic Information Technology

基　　金：高功率微波技术重点实验室资助项目(2014HPM-01)

摘　　要：利用能量较低的脉冲激光二极管,在较高场强下触发GaAs光导开关,使其工作于雪崩模式,从而产生纳秒上升前沿的快脉冲电压。GaAs光导开关采用垂直体结构设计,芯片厚度为2mm,电极形状分别为圆环和圆面,触发光脉冲从圆环穿过。快脉冲产生由同轴Blumlein脉冲形成线完成。对基于GaAs光导开关的同轴Blumlein脉冲线进行了模拟仿真和实验,当充电电压超过8kV(40kV/cm)后,开关开始了雪崩工作模式。当充电电压约为15kV(75kV/cm)时,在50Ω负载上获得了约11kV的脉冲电压,实验波形与仿真波形一致。对开关抖动进行了测试,其测试结果显示开关充电电压对抖动影响很大,随着开关偏压增加,开关抖动减小,开关获得了最小抖动约700ps。By using laser diode with low energy to trigger GaAs Photoconductive Semiconductor Switch （PCSS） at high bias voltage, which makes GaAs PCSS working under avalanche mode, fast pulse voltage is produced. GaAs PCSS is designed as vertical bulk structure with 2mm thickness. The electrodes are of round and doughnut configuration and the trigger light passes through the center of doughnut electrode. The fast pulse is achieved by coaxial Blumlein pulse form line. The simulation and experiment of coaxial Blumlein pulse form line based on GaAs PCSS is executed. When charge voltage exceeds 8kV（40kV/cm）, the output voltage impulse increases rapidly and the rise time is shorter than that of laser impulse, which indicates PCSS turns into avalanche mode. When bias voltage is up to 15kV（75kV/cm）, 11kV voltage pulse is obtained under 50Ω of load, which accords well with the simulation result. The switch jitter is tested, and the results show that the switch bias voltage has great influence on the switch jitter. As the switch bias voltage increases, the switch jitter decreases. When the bias voltage reaches 15kV, the lowest jitter of 700ps is obtained.

关 键 词：砷化镓 光导开关 雪崩 半导体二极管 

分 类 号：TN36[电子电信—物理电子学]