单晶硅性能的实验研究  

Experimental Study on Monocrystal Silicon Characteristics

作　　者：加万里[1] 王勇[2] 袁振邦 

机构地区：[1]西安航天动力试验技术研究所,西安710100 [2]陕西延长石油(集团)有限责任公司,西安710075 [3]中石化宁波工程有限公司,宁波315103

出　　处：《价值工程》2016年第21期98-99,共2页Value Engineering

摘　　要：对三根优质单晶硅的性能进行了实验研究,对电阻率、氧含量、碳含量、少子寿命等进行了检测。结果表明:当单晶炉内压强为1300 Pa时,所生产出的单晶硅质量最佳,其电阻率为0.7,少子寿命为9.8,含碳量为3.3×10^(18)atoms/cm^3,含氧量为0.46×10^(18)atoms/cm^3。The experimental study of three high-quality monocrystal silicons have been carried, the resistivity, minority carrier lifetime, oxygen content, carbon content were tested. The results show that when the production process of Monocrystal furnace＇s pressure is 1300 Pa, the best quality monocrystalline silicon can be produced, the resistivity is 0.7, the minority carrier lifetime is 9.8, the carbon content is 3.3× 1018 atoms/cm3, the oxygen content is 0.46×1018 atoms/cm3.

关 键 词：单晶硅 电阻率 少子寿命 含碳量 含氧量 

分 类 号：TB321[一般工业技术—材料科学与工程]