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作 者:张蕾[1,2] 刘洪祥[1] 陈光[1] 高卫东[1]
机构地区:[1]中国科学院光电技术研究所,成都610209 [2]中国科学院大学,北京100049
出 处:《光电工程》2016年第7期89-94,共6页Opto-Electronic Engineering
摘 要:为提高离子束溅射制备1 064 nm、532 nm双波长增透膜抗激光损伤阈值,分别在靠近基板、空气侧加镀一定厚度二氧化硅膜层,研究缓冲层、保护层对增透膜抗激光损伤阈值的影响。依据ISO21254-2损伤测试标准,测试不同膜系结构增透膜抗1 064 nm波长激光损伤阈值。实验结果表明,二氧化硅缓冲层提高增透膜抗激光损伤阈值约65.4%;二氧化硅保护层提高增透膜抗激光损伤阈值约66.7%;同时加镀缓冲层、保护层增透膜抗激光损伤阈值显著提高约119%。To improve the laser induced damage threshold of dual-wavelength antireflection coatings which were deposited by ion beam sputtered for 1 064 nm and 532 nm, a certain thickness of the silica layer was deposited near the substrate and the air respectively to investigate the effect of the buffer layer and the protective layer on antireflection coatings for laser induced damage threshold. The laser induced damage threshold of different antireflection coatings was tested by a 1 064 nm laser system according to ISO 21254-2 standard. The experiment results show that compared with the coatings without buffer layer and protective layer, the laser induced damage threshold of the coatings with buffer layer, the coatings with protective layer and the coatings with buffer layer and protective layer are 65.4%, 66.7%, 119% higher respectively.
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