Sb掺杂对SnO2薄膜光电性能的影响研究  

Effects of Sb doping on optoelectronic properties of the SnO_2 thin film

作　　者：周传仓[1] 张飞鹏[2,3] 张忻[3] 张静文[4] 杨新宇[4] 

机构地区：[1]丽水学院理学院,浙江丽水323000 [2]河南城建学院数理学院,河南平顶山467036 [3]北京工业大学材料科学与工程学院,新型功能材料教育部重点实验室,北京100124 [4]合肥工业大学材料科学与工程学院,新型功能材料与器件安徽省重点实验室,安徽合肥230009

出　　处：《电子元件与材料》2016年第8期23-26,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助(No.51572066,);高等学校计算物理课程教学研究资助(No.JZW-14-JW-03)

摘　　要：以乙醇为溶剂采用溶胶-凝胶法制备出了Sb掺杂的SnO_2复合透明导电薄膜,并利用XRD,SEM,紫外-可见分光光度计,四探针电阻仪等测试方法对Sb掺杂的SnO_2复合薄膜的结构和物性进行了研究。结果表明,当Sb掺杂量小于摩尔分数7%时,SnO_2复合薄膜均呈四方金红石型晶体结构;随着Sb掺杂量的增加,薄膜电阻率先降低后增大,当Sb掺杂量为摩尔分数5%时,薄膜电阻率达到最小值1.4×10^(–3)?·cm。在350~700 nm波长范围内,当Sb掺杂量小于摩尔分数7%时,SnO_2复合薄膜的透过率均在80%以上。The Sb doped SnO2 transparent compound thin films were synthesized by sol-gel method using ethanol as solvent. The structural and photoelectric properties were systematically analyzed by X-ray diffraction patterns （XRD）, scanning electron microscopy （SEM）, UV-Vis spectrophotometer and the four point probe resistivity measurement apparatus. The results show that the Sb doped thin films exhibit tetragonal rutile crystal structure at content under 7% （mole fraction）. The electrical resistivity can be firstly decreased and then increased by increasing the Sb doping content, and the resistivity value can reach the minimum value of 1.4×10–3 Ω·cm at Sb doping content of 5% （molar fraction）. The optical transparency of the thin films doped by Sb under 7% （mole fraction） content remain above 80% for the light with wavelength between 350 nm and 700 nm.

关 键 词：溶胶-凝胶法 SNO2薄膜 掺杂 表征 结构 光电性能 

分 类 号：TQ139.2[化学工程—无机化工]