Modeling and simulation of carbon nanotube field effect transistor and its circuit application  

作　　者：Amandeep Singh Dinesh Kumar Saini Dinesh Agarwal Sajal Aggarwal Mamta Khosla Balwinder Raj 

机构地区：[1]Department of Electronics & Communication,National Institute of Technology

出　　处：《Journal of Semiconductors》2016年第7期35-40,共6页半导体学报（英文版）

摘　　要：The carbon nanotube field effect transistor （CNTFET） is modelled for circuit application. The model is based on the transport mechanism and it directly relates the transport mechanism with the chirality. Also, it does not consider self consistent equations and thus is used to develop the HSPICE compatible circuit model. For validation of the model, it is applied to the top gate CNTFET structure and the MATLAB simulation results are compared with the simulations of a similar structure created in NanoTCAD ViDES. For demonstrating the circuit compatibility of the model, two circuits viz. inverter and SRAM are designed and simulated in HSPICE. Finally, SRAM performance metrics are compared with those of device simulations from NanoTCAD ViDES.The carbon nanotube field effect transistor （CNTFET） is modelled for circuit application. The model is based on the transport mechanism and it directly relates the transport mechanism with the chirality. Also, it does not consider self consistent equations and thus is used to develop the HSPICE compatible circuit model. For validation of the model, it is applied to the top gate CNTFET structure and the MATLAB simulation results are compared with the simulations of a similar structure created in NanoTCAD ViDES. For demonstrating the circuit compatibility of the model, two circuits viz. inverter and SRAM are designed and simulated in HSPICE. Finally, SRAM performance metrics are compared with those of device simulations from NanoTCAD ViDES.

关 键 词：carbon nanotube CNTFET SRAM HSPICE NanoTCAD ViDES 

分 类 号：TN386[电子电信—物理电子学] TN431.2