云南高校图书馆联盟文献共享服务平台- CNTFET

CNTFET: 作品数：25被引量：14H指数：2; 导出分析报告; 相关领域：电子电信一般工业技术更多>>; 相关作者：刘兴辉李松杰金铁凝李天宇张亚非更多>>; 相关机构：上海交通大学辽宁大学中国科学院大学中国科学院微电子研究所更多>>; 相关期刊：《Computers, Materials & Continua》《无机材料学报》《真空科学与技术学报》《Journal of Semiconductors》更多>>; 相关基金：国家自然科学基金辽宁省科技厅自然科学基金辽宁省教育厅高等学校科学研究项目上海市青年科技启明星计划更多>>

基于碳基500nm工艺的双采样真随机数发生器: 《半导体技术》2024年第8期732-741,757,共11页蔡铭嫣张九龄陈智峰廖文丽陈译陈铖颖; 福建省自然科学基金(2023H0052);厦门市重大科技计划项目(3502Z20221022)。; 碳纳米管场效应晶体管(CNTFET)因其极小的尺寸、超高的载流子迁移率、准一维结构的弹道输运等特性,顺应了未来集成电路高集成化和微型化的发展趋势。基于课题组构建的500 nm碳基工艺设计包,设计了一款真随机数发生器(TRNG)。碳基真随机...; 关键词：碳纳米管场效应晶体管(CNTFET) 紧凑模型真随机数发生器(TRNG) 振荡器时钟抖动

A Study on the Design Method of Hybrid MOSFET-CNTFET Based SRAM-A Secondary Publication: 《Journal of Electronic Research and Application》2024年第1期106-112,共7页Geunho Cho; supported by Seokyeong University in 2022.The EDA tool was supported by the IC Design Education Center(IDEC),Korea.; More than 10,000 carbon nanotube field-effect transistors(CNTFETs)have been successfully integrated into one semiconductor chip using conventional semiconductor design procedures and manufacturing processes.These tran...; 关键词：MOSFET CNTFET SRAM HYBRID Carbon nanotube

Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping: 《Computer Systems Science & Engineering》2023年第8期1617-1630,共14页A.Arulmary V.Rajamani T.Kavitha; The method opted for accuracy,and no existing studies are based on this method.A design and characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube(SWCNT)Field Effect Transistor as a ...; 关键词：Single halo CNTFET self-consistent poisson equation green’s function photodetector

Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits被引量：1: 《Frontiers of Information Technology & Electronic Engineering》2023年第4期599-616,共18页Ayoub SADEGHI Razieh GHASEMI Hossein GHASEMIAN Nabiollah SHIRI; Carbon nanotube field-effect transistors(CNTFETs) are reliable alternatives for conventional transistors, especially for use in approximate computing(AC) based error-resilient digital circuits. In this paper, CNTFET t...; 关键词：Carbon nanotube field-effect transistor(CNTFET) Optimization algorithm Nondominated sorting based genetic algorithm II(NSGA-II) Gate diffusion input(GDI) Approximate computing

CNTFET Based Fully Differential First Order All Pass Filter: 《Computer Systems Science & Engineering》2023年第3期2425-2438,共14页Muhammad I.Masud Iqbal A.Khan; The authors would like to thank the Deanship of Scientific Research at Umm Al-QuraUniversity for supporting this work by Grant Code: (22UQU4320299DSR01).; A novel,carbon nanotubefield effect transistor(CNTFET)based fully differentialfirst order all passfilter(FDFAPF)circuit configuration is presented.The FDFAPF uses CNTFET based negative transconductors(NTs)and positive...; 关键词：Fully differential CNTFET all passfilters pole frequency TUNABILITY

Design of Multi-Valued Logic Circuit Using Carbon Nano Tube Field Transistors: 《Computers, Materials & Continua》2022年第12期5283-5298,共16页S.V.Ratankumar L.Koteswara Rao M.Kiran Kumar; The design of a three-input logic circuit using carbon nanotube field effect transistors(CNTFETs)is presented.Ternary logic must be an exact replacement for dual logic since it performs straightforwardly in digital de...; 关键词：Carbon nanotube field effect transistor(CNTFET) multivalued logic(MVL) ternary adder Hewlett simulation program with integrated circuit emphasis(HSPICE) chirality(nm) ADDER

CNTFET Based Grounded Active Inductor for Broadband Applications: 《Computers, Materials & Continua》2022年第10期2135-2149,共15页Muhammad I.Masud Nasir Shaikh-Husin Iqbal A.Khan Abu K.Bin A’Ain; The authors would like to thank the Deanship of Scientific Research at Umm Al-Qura University for supporting this work by Grant Code:(22UQU4320299DSR01).; A new carbon nanotube field effect transistor(CNTFET)based grounded active inductor(GAI)circuit is presented in this work.The suggested GAI offers a tunable inductance with a very wide inductive bandwidth,high quality...; 关键词：Active inductor gyrator-C CNTFET quality factor selfresonance frequency

一种新型纳米器件逻辑纠错专用集成电路架构被引量：1: 《半导体技术》2020年第2期116-121,共6页窦怀阳薛晓勇冯洁; 国家自然科学基金资助项目(61704029,61874028,61834009).; 新型纳米器件被视为摩尔定律极限临近情况下CMOS技术的有力补充。为克服新型纳米器件缺陷率高的问题,提出了一种基于现场可编程纳米线互连(FPNI)架构的具有自修正能力的纠错(FT)专用集成电路(ASIC)架构FT-FPNI,这种架构适用于易出错的...; 关键词：内嵌自修复(BISR) 现场可编程纳米线互连(FPNI) 纳米器件逻辑碳纳米管场效应管(CNTFET) 电路纠错

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET: 《Journal of Semiconductors》2018年第4期34-38,共5页Shashi Bala Mamta Khosla; A double-gate tunnel field-effect transistor （DG tunnel FET） has been designed and investigated for various channel materials such as silicon （Si）, gallium arsenide （GaAs）, alminium gallium arsenide （A1xGa1-xAs...; 关键词：band-to-band tunneling （BTBT） double gate （DG） silicon （Si） gallium arsenide （GaAs） aluminum gallium arsenide （AlxGa1 xAs） tunnel field effect transistor （FET） carbon nanotube （CNT）

A novel ternary half adder and multiplier based on carbon nanotube field effect transistors被引量：1: 《Frontiers of Information Technology & Electronic Engineering》2017年第3期423-433,共11页Sepehr TABRIZCHI Nooshin AZIMI Keivan NAVI; A lot of research has been done on multiple-valued logic(MVL) such as ternary logic in these years. MVL reduces the number of necessary operations and also decreases the chip area that would be used. Carbon nanotube f...; 关键词：CNTFET-based design TERNARY Half adder MULTIPLIER Multiple-valued logic(MVL)

CNTFET