CNTFET Based Grounded Active Inductor for Broadband Applications  

作　　者：Muhammad I.Masud Nasir Shaikh-Husin Iqbal A.Khan Abu K.Bin A’Ain 

机构地区：[1]Department of Electrical Engineering,Umm Al Qura University,Makkah,21955,Saudi Arabia [2]School of Electrical Engineering,Faculty of Engineering,Universiti Teknologi Malaysia,Johor Bahru,81310,Johor,Malaysia

出　　处：《Computers, Materials & Continua》2022年第10期2135-2149,共15页计算机、材料和连续体（英文）

基　　金：The authors would like to thank the Deanship of Scientific Research at Umm Al-Qura University for supporting this work by Grant Code:(22UQU4320299DSR01).

摘　　要：A new carbon nanotube field effect transistor(CNTFET)based grounded active inductor(GAI)circuit is presented in this work.The suggested GAI offers a tunable inductance with a very wide inductive bandwidth,high quality factor(QF)and low power dissipation.The tunability of the realized circuit is achieved through CNTFET based varactor.The proposed topology shows inductive behavior in the frequency range of 0.1–101 GHz and achieves to a maximum QF of 9125.The GAI operates at 0.7 V with 0.337 mW of power consumption.To demonstrate the performance of GAI,a broadband low noise amplifier(LNA)circuit is designed by utilizing the GAI based input matching-network.The realized LNA provides high frequency bandwidth(17.5–57 GHz),low noise figure(<3 dB)and occupies less space due to absence of any spiral inductor.Moreover,it exhibits a flat forward gain of 15.9 than±0.9 dB,a reverse isolation less than−63 dB and input return loss less−10 dB over the entire frequency bandwidth.The proposed CNTFET based GAI and LNA circuits are designed and verified by using HSPICE simulations with Stanford CNTFET model at 16 nm technology node.

关 键 词：Active inductor gyrator-C CNTFET quality factor selfresonance frequency 

分 类 号：TN92[电子电信—通信与信息系统]