Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse  

作　　者：席晓文 柴常春 刘阳 杨银堂 樊庆扬 史春蕾 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University

出　　处：《Chinese Physics B》2016年第8期458-462,共5页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(CAEP)(Grant No.2015-0214.XY.K)

摘　　要：An electromagnetic pulse（EMP）-induced damage model based on the internal damage mechanism of the Ga As pseudomorphic high electron mobility transistor（PHEMT） is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.An electromagnetic pulse（EMP）-induced damage model based on the internal damage mechanism of the Ga As pseudomorphic high electron mobility transistor（PHEMT） is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.

关 键 词：PHEMT electromagnetic pulse damage threshold empirical formula 

分 类 号：TN32[电子电信—物理电子学]