空间GaAs/Ge太阳电池电学性能的数值模拟  

The Numerical Simulation of the Electrical Properties of Space GaAs/Ge Solar Cells

作　　者：邓道平 胡建民[1] 

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2016年第2期87-89,118,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省高等学校教改工程项目(JG2013010361);国家自然科学基金项目(批准号:11075043);黑龙江省教育厅科学技术研究项目资助(12541233)

摘　　要：使用太阳电池模拟程序AFORS-HET拟合空间GaAs/Ge太阳电池的电学参数,以期为进一步研究空间太阳电池的辐照损伤效应开辟新途径.根据GaAs/Ge太阳电池的基本参数建立太阳电池基本模型,对照程序文件格式要求制作空间AM0标准太阳光谱和GaAs材料的吸收系数文件.数值模拟结果表明,模拟结果与实验数据符合,AFORS-HET程序能够很好地表征空间GaAs/Ge太阳电池内部载流子输运的基本性质.In this paper,the electrical parameters of space GaAs / Ge solar cells is fitted by using solar cell simulation program AFORS- HET in order to further study irradiation damage effects of space solar cells. The basic model of the solar cells is established by the basic parameters of GaAs / Ge solar cells. The space AM0 standard solar spectrum and the absorption coefficient of GaAs material are made by contrast the program file format requirements. The simulation results showed that the simulation results were coincidence with the experimental data. The AFORS- HET program can be a good characterization of the internal the carriers＇ transport basic properties of space GaAs / Ge solar cells.

关 键 词：GAAS太阳电池 AFORS-HET程序 数值模拟 

分 类 号：O47[理学—半导体物理]