退火和电子辐照复合处理对ZnGeP_2单晶性能的改进研究  

Study on Improvement of ZnGeP_2 Single Crystal Properties by Annealing and Electron Irradiation Composite Process

作　　者：赵张瑞 朱世富[1] 赵北君[1] 陈宝军[1] 何知宇[1] 杨登辉[1] 刘伟[1] 谢虎[1] 吴嘉琪[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《人工晶体学报》2016年第7期1723-1726,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金重点项目(50732005)

摘　　要：采用退火和电子辐照相结合的复合工艺方法,对ZnGeP_2晶体进行生长后处理。采用傅里叶红外光谱仪(FTIR)和高阻仪(HRM)等,对经不同次序的复合工艺处理前后样品的红外透过率和电阻率进行了测试。结果表明,采用先退火后电子辐照的复合处理工艺,样品的红外透过率能得到明显的提高。The post-growth treatment of ZnGeP2 single crystals was carried out by the electron irradiation and annealing composite process. IR transmittance and resistivity of wafers treated by different composite processes were characterized by Fourier transform infrared spectroscopy （FTIR） and High Resistance Meter （HRM）. The results indicate that IR transmittance of the crystal processed first by annealing then by electron irradiation was improved evidently.

关 键 词：ZNGEP2 退火 电子辐照 复合处理 红外透过率 

分 类 号：O77[理学—晶体学]