硅NPN型红外光电晶体管输出光电流及线性度的研究  

Research on Output Photocurrent and Linearity of Silicon NPN Infrared Phototransistors

作　　者：周涛[1] 陆晓东[1] 吴元庆[1] 

机构地区：[1]渤海大学新能源学院,锦州121000

出　　处：《人工晶体学报》2016年第7期1770-1774,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11304020)

摘　　要：利用TCAD半导体器件仿真软件详细地分析了在不同上表面非金属接触区域复合速率（FSRV）、光强（Pin）及光照基区横向宽度（SBL）的情况下，硅NPN红外光电晶体管输出光电流（IL）及输出光电流线性度的变化特点和规律。仿真结果表明：当SBL一定时，随着FSRV的增大，在不同Pin的情况下，光电晶体管的IL均减小。当FSRV较小（50—5000cm／s）时，不伺Pin情况下光电晶体管的IL差别较小。当FSRV较大（〉5000cm／s）时，随着FSRV的增大，不同Pin情况下光电晶体管的IL显著降低。当FSRV一定时，随着SBL的增大，不同Pin情况下光电晶体管的IL均有不同程度的增大。随着SBL和Pin的进一步增大，不同FSRV情况下的IL均逐渐趋于饱和状态。当SBL一定时，FSRV越小，IL进入饱和状态所对应的临界Pin越小。当FSRV一定时，SBL越大，IL进入饱和状态所对应的临界Pin越小。The change characteristics and regularity of output photocurrent （IL ） and photocurrent output linearity of silicon NPN infrared phototransistors were analyzed under different non-metallic contact area surface recombination rate （FSRV）, light intensity （Pin） and base horizontal width （SBL） in the light region in detail by using TCAD semiconductor device simulation software. The simulation results show that when the base width in the light region is a certain value, phototransistor output photocurrent decreases with the increase of the surface recombination rate under different light intensity. When the surface recombination rate is smaller （50-5000 cm/s）, the difference between phototransistor output photocurrent is smaller under different light intensities. When the surface recombination rate is greater （ 〉 5000 cm/s）, phototransistor output photoeurrent decreases significantly with the increase of surface recombination rate under different light intensities, when the surface recombination rate is a certain value, output photocurrent has varying degrees of increase with the increase of surface recombination rate under different light intensities. With the base horizontal width in the light region and light intensity further increasing, output photocurrent gradually tends towards saturation under different surface recombination rates, when the base width in the light region is a certain value, the smaller the surface recombination rate, the smaller the corresponding critical light intensity that output photocurrent enters into the saturated state, when the surface recombination rate is a certain value, the greater the base width in the light region, the smaller the corresponding critical light intensity that output photocurrent enters into saturated state.

关 键 词：光电晶体管 光照基区 光电流 输出特性 线性度 优化 

分 类 号：TK514[动力工程及工程热物理—热能工程]