Y^(3+)掺杂BST/ZrO_2复合薄膜的制备及介电性能研究  

Study on Preparation and Dielectric Properties of Y^(3+)-doped BST/ZrO_2 Composite Thin Film

作　　者：姜楠[1] 刘军 洪玮[1] 张娟[1] 吴伟骏[1] 林鹏飞[1] 骆英[3] 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013 [2]江苏省高端结构材料重点实验室,镇江212013 [3]江苏大学土木工程与力学学院,镇江212013

出　　处：《人工晶体学报》2016年第7期1963-1969,共7页Journal of Synthetic Crystals

摘　　要：运用溶胶-凝胶法在Si/SiO_2/Ti/Pt基底上制备了掺杂不同量的Y^(3+)的单层Ba_(0.65)Sr_(0.35)TiO_3(BST)薄膜和并联结构的BST/ZrO_2复合薄膜。研究发现:当BST溶胶中掺入了适量的Y^(3+)后,制备的单层BST的表面形貌得到改善,介电性能提高;掺杂的Y^(3+)为1mol%时单层BST薄膜介电性能最佳,介电常数为400.53;介电损耗为0.0125。BST/ZrO_2复合薄膜的电容值相对于单层BST薄膜得到明显提高,当烧结温度为750℃时,BST/ZrO_2复合薄膜综合介电性能最佳,介电常数790.12;介电损耗达到0.051。Monolayer Ba0.65Sr0.35TiO3 （BST） thin films and parallel structure of the BST/ZrO2 composite films were prepared on Si/SiO2/Pt/Ti substrate with different concentrations of Y-doping by sol-gel method. It is found that the microstrueture and the dielectric properties can be improved of the monolayer BST films when doping the right amount Y^3＋. When Y^3＋-doped amount is l mol%, the dielectric properties of the monolayer films are highest（ dielectric constant 400.53, dielectric loss 0. 0125 ） . The dielectric properties of BST/ZrO2 composite films were relatively best at the sintering temperature of 750 ℃ （dielectric constant 790.12 , dielectric loss 0. 051 ）.

关 键 词：溶胶-凝胶法 BST薄膜 BST/ZrO2复合薄膜 介电性能 

分 类 号：TN386[电子电信—物理电子学]