单晶硅抛光片表面质量探究  

Investigation on the Surface Quality of Silicon Wafers

作　　者：范红娜[1] 杨洪星[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2016年第8期27-29,44,共4页Equipment for Electronic Products Manufacturing

摘　　要：LED集成度越来越高,集成电路线宽不断收窄,对硅衬底表面的质量提出了越来越严苛的要求,抛光片表面质量对器件制造有重要影响。RCA清洗是晶片清洗最为成熟的工艺,其工艺稳定性受到多重因素影响。从DHF溶液使用及PFA花篮质量两方面分析了RCA清洗过程的两个关键因素对晶片表面质量的影响。As the integration of LEDs increases and the technology node of ULSI decreases,extremely tight requirements are being placed on the quality of wafers＇ surface.The quality of wafers＇ surface has important influence on the device manufacture.RCA is most used in wafer cleaning,which is influenced by many factors.In this study,DHF solution and PFA cassette was investigated on the quality of silicon wafers.

关 键 词：清洗技术 花篮 氢氟酸 颗粒度 

分 类 号：TN305.2[电子电信—物理电子学]