原子层沉积生长电学性质可调ZnO薄膜工艺  

Process of the Growth of ZnO Thin Films with Tunable Electrical Characteristics by the Atomic Layer Deposition

作　　者：张思敏 程嵩 卢维尔[1,2] 夏洋 

机构地区：[1]集成电路测试技术北京市重点实验室,北京100029 [2]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《微纳电子技术》2016年第9期605-609,633,共6页Micronanoelectronic Technology

基　　金：国家重大科研仪器研制项目(61427901)

摘　　要：采用热型原子层沉积(T-ALD)和等离子体增强型原子层沉积(PEALD)技术在蓝宝石衬底上制备ZnO,不采用任何掺杂手段,通过调节生长温度、氧等离子体作用时间等参数,制备了电阻率在6个数量级(10^(-3)~10~3Ω·cm)范围内变化的ZnO薄膜。采用去离子水作氧源的T-ALD制备的ZnO薄膜载流子浓度高达10^(19)/cm^3量级,载流子迁移率较高,薄膜电阻率较低,适用于透明导电薄膜;采用氧等离子体作为氧源PEALD制备的薄膜载流子浓度达到10^(17)/cm^3量级,适用于薄膜晶体管。还讨论了不同生长工艺条件对薄膜晶型和表面形貌的影响。ZnO thin films were deposited on the sapphire substrate by the thermal atomic layer deposition（T-ALD）and plasma enhanced atomic layer deposition（PEALD）.Without any doping method,the ZnO thin films with the resistivity changed within six orders of magnitude（10^-3-10^3Ω·cm）were prepared by adjusting the growth temperature and the action time of the O2 plasma.The ZnO thin films prepared by the T-ALD with the deionized water as oxide source have high carrier concentration up to 10^19/cm^3,high carrier mobility and low resistivity,which are useful in the fabrication of transparent conductive films.While the ZnO thin films prepared by the PEALD with the O2 plasma as oxide source have a relative lower carrier concentration of10^17/cm^3,which are useful in the fabrication of thin film transistor.The influences of process conditions on the crystal type and surface morphology of the ZnO thin films were also discussed.

关 键 词：原子层沉积(ALD) ZNO薄膜 电学性质可调 晶型 表面形貌 

分 类 号：TN304.055[电子电信—物理电子学]