Study of Photofield Emission in GaAs Using Kronig-Penney Model  

作　　者：Leishangthem Nirmala Devi Benjamin Vanlalruata Ram Kumar Thapa A.H. Reshak 

机构地区：[1]Condensed Matter Theory Research Group, Department of Physics, Mizoram University, 796004, India [2]Condensed Matter Physics Research Centre, Butwal, Rupendehi, Nepal [3]New Technologies - Research Centre, University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic [4]Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University MalaysiaPerlis, 01007 Kangar, Perlis, Malaysia

出　　处：《材料科学与工程（中英文A版）》2016年第2期110-112,共3页Journal of Materials Science and Engineering A

关 键 词：KRONIG-PENNEY模型 GAAS 场发射 密度泛函理论 发射电流 计算结果 初始状态 费米能级 

分 类 号：O481.1[理学—固体物理] TN304.23[理学—物理]