数据记录器中NAND Flash的坏块管理方法  

Bad Block Management Methods of NAND Flash Memoryin Data Recorder

作　　者：邢旺[1] 郁聪冲[1] 

机构地区：[1]92941部队95分队,葫芦岛125000

出　　处：《舰船电子工程》2016年第8期132-134,160,共4页Ship Electronic Engineering

摘　　要：NAND Flash作为数据记录器中的数据存储芯片,其在应用时容易受到坏块问题的影响。大量的应用表明坏块能够降低存储芯片的稳定性,造成存储数据的错误,因此为了保证存储数据正确,对NAND Flash芯片中坏块的管理具有重要意义。介绍了NAND Flash的物理结构,归纳了坏块跳过法和动态坏块管理法,为NAND Flash的坏块管理提供了依据。NAND Flash is used as memory chips of the data recorder. NAND Flash is easily affected by the bad blockproblem. Bad block could be able to reduce the stability of the memory chips and cause data errors. Therefore, bad blockmanagement of the NAND Flash is important. The physical structure of NAND Flash is introduced. Bad block skip methodand dynamic bad block management method are summarized. Theoretic analysis can verify the truth of the bad block management methods of NAND Flash.

关 键 词：NAND FLASH 坏块识别 坏块替换 坏块跳过 动态坏块管理 

分 类 号：TN401[电子电信—微电子学与固体电子学]