外延生长用磷化铟单晶片清洗技术  

Cleaning Methods of InP Wafers for Epi-Growth

作　　者：武永超[1] 林健[1] 刘春香[1] 王云彪[1] 赵权[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2016年第8期620-624,共5页Semiconductor Technology

摘　　要：根据磷化铟晶片的清洗机理,进行了三组磷化铟晶片清洗实验,并使用原子力显微镜（AFM）、表面分析仪和X射线光电子能谱（XPS）对晶片的化学成分、表面粗糙度及均匀性进行了表征,最终确定了氧化-酸剥离的磷化铟清洗工艺,并对清洗过程中晶片表面雾值变化进行研究。结果表明,清洗后的磷化铟晶片表面粗糙度达到0.12 nm,优于国外磷化铟晶片（0.15~0.17 nm）。XPS测试结果显示晶片表面形成了富铟层,富铟层降低了磷化铟晶片表面化学活性,起到了表面稳定作用,提高了外延生长质量。According to the cleaning mechanism of In P wafer,three cleaning experiments of In P wafer were carried out. Chemical components,surface roughness and uniformity of wafers were characterized by the atomic force microscope（ AFM）,surface scan instruments and X-ray photoelectron spectroscopy（ XPS）. Oxidation-acid stripping cleaning methods of In P were approved,and the change of the surface haze value during the cleaning process was studied. The results show that after cleaning,the surface roughness of In P wafers is as low as 0. 12 nm,which is better than that of foreign In P wafers（ 0. 15- 0. 17 nm）. XPS test results show that a indium-rich layer is formed on the surface of wafers,which lowers the surface chemical activity of In P wafers,stabilizes the wafer surface and enhances the epilayer growth quality.

关 键 词：磷化铟单晶衬底 表面雾值 表面粗糙度 原子力显微镜(AFM) X射线光电子能谱(XPS) 

分 类 号：TN305.97[电子电信—物理电子学]