一种新型封装材料的热耗散能力分析与验证  

Thermal Dissipation Analysis and Verification of a Novel Packaging Material

作　　者：刘林杰[1] 崔朝探 高岭[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]河北中瓷电子科技有限公司,石家庄050051

出　　处：《半导体技术》2016年第8期631-635,共5页Semiconductor Technology

摘　　要：随着器件功率密度的不断提升,散热问题已成为微电子器件封装失效的主要原因之一。金刚石/铜(CuC)复合材料具有较高的热导率,可作为新一代散热材料应用于高功率密度器件的封装中。本文采用有限元分析(FEA)的方法对比了一款功耗为70 W的Ga N器件在应用不同热沉材料封装后的芯片结温和结-壳热阻,采用红外热成像仪测试了该款器件在使用新型金刚石/铜材料和常规的多层复合材料铜-钼铜-铜(Cu-Mo Cu-Cu,CPC)作为热沉后的结-壳热阻。结果表明,相比其他热沉材料,CuC可以大幅度降低芯片结温,在器件正常工作的条件下,采用CuC热沉材料的芯片热阻较采用CPC热沉材料的芯片热阻低19.74%,CuC热沉的热耗散能力高达4 464 W/cm^2。With the increase of the device power density,heat dissipation has become one of the main causes of microelectronic devices packaging failure. As a new generation of heat dissipation material with excellent thermal conductivity,diamond / Cucomposites（ CuC） should be a good candidate on pac-kaging high power density devices. Finite element analysis（ FEA） method is used to compare the chip junction temperature and junction-case thermal resistance of a novel 70 W power-dissipation Ga N power device with different heat sink materials. Infrared thermography instrument is implemented to test the actual junction-case thermal resistance of the device with novel CuC heat sink materials and with typical copper-copper molybdenum-copper laminates（ Cu-Mo Cu-Cu,CPC） heat sink materials. The results show that CuC heat sink materials can greatly reduce the chip junction temperature compared with other heat sink materials. Thermal resistance of the chip with CuC heat sink material is reduced by 19. 74% in device＇s normal operating conditions,compared with that of the chip with original CPC heat sink material. And CuC has excellent heat dissipation capability of 4 464 W / cm2.

关 键 词：微电子封装 有限元仿真 新型热沉材料Cu C 热阻 热耗散能力 

分 类 号：TN305.94[电子电信—物理电子学]