非对称半导体双量子阱中的双电磁感应透明现象  

Double electromagnetically induced transparency phenomenon in an asymmetric N-type semiconductor quantum well

作　　者：张蔚曦[1] 张愉[2] 金慧[1] 

机构地区：[1]铜仁学院物理与电子工程学院,贵州铜仁554300 [2]南京邮电大学光电工程学院,江苏南京210023

出　　处：《铜仁学院学报》2016年第4期40-43,46,共5页Journal of Tongren University

基　　金：贵州省教育厅自然科学研究项目(KY(2015)384;KY(2015)446)

摘　　要：对在交叉耦合纵波光学声子(Cross-coupling Longitude-optical Phonons,简称CCLOP)弛豫时四能级非对称N型半导体量子阱系统的光吸收特性进行了研究。研究表明,在线性范围内,在该系统中能够实现电磁感应透明效应(Electromagnetically Induced Transparency,简称EIT),并且这种EIT效应依赖于光场与系统的谐振控制和CCLOP弛豫;尤其是当空穴态和反键态之间的跃迁频率较大时,系统会出现双EIT现象。有趣的是,当CCLOP弛豫增大时,将出现近乎完美的双EIT现象。研究结果在全光开关和其他的光信息工程中有着潜在的应用。The characteristics of optical absorption in an asymmetric four-level N-type semiconductor quantum well with the cross-coupling longitude-optical phonons（CCLOP） relaxation were studied. In the linear range, it shows that the electromagnetically induced transparency（EIT） relies on the coherence control of the optical fields and the CCLOP relaxation. Especially, there exhibits a double-EIT when the transition frequency between the hole and anti-bonding states is rather large. Interestingly, there appears a near-perfect double-EIT phenomenon when increasing the CCLOP relaxation. It is expected that these results may exhibit some potential applications in the all-optical switching and other optical information engineering related issues.

关 键 词：双电磁感应透明 半导体量子阱 纵波光学声子 

分 类 号：O472.3[理学—半导体物理]