光敏二极管电压特性研究  

Research of Photodiode Voltage Characteristic

作　　者：吴会利[1] 郑莹[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2016年第4期16-18,共3页Microprocessors

摘　　要：光敏二极管是在外加反向偏压的情况下体现出其光电转换特性的。对于光敏器件来说,其反向击穿特性至关重要。首先对光敏二极管的结构、工作原理进行了概述,从浅结光敏区、过程缺陷、表面应力、不同结构等方面展开对光敏二极管电压特性的研究工作。通过实验验证及器件工艺模拟仿真,分别采用快速退火、改进表面清洗工艺、掺氯氧化工艺、采用合理的淀积温度及速率、采用双层膜结构或热退火工艺等方式改善和提高光敏二极管的电压特性。通过研究其反向击穿电压特性,保证其电压参数的同时,可以有效提升产品其它参数如暗电流、光生电压等的控制水平。In the case of external reverse bias, the photodiode reflects its photoelectric conversioncharacteristics. The reverse breakdown characteristics are essential for the photosensitive device. At first,the structure and working principle of the photodiode are summarized, and the voltage characteristics ofthe photodiode are studied in the aspects of shallow photosensitive area, process defect, surface stress andstructure. The simulation of the device process and experiments, such as the rapid annealing process,surface cleaning process, chlorine oxidation process, reasonable deposition temperature and rate, doublelayer film structure and thermal annealing process, are achieved to improve the reverse breakdowncharacteristics. At last, the characteristics is studied to ensure the voltage parameters and improve thecontrol level of other parameters such as dark current and light voltage,etc.

关 键 词：反向击穿电压 光电流 暗电流 浅结光敏区 层错缺陷 晶格缺陷 沾污 表面应力 

分 类 号：TN4[电子电信—微电子学与固体电子学]