利用CsN_3n型掺杂电子传输层改善OLED器件性能的研究  被引量:2

Improved properties of organic light-emitting devices by utilizing CsN_3 n-type doped electron transport layer

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作  者:于瑶瑶[1,2] 陈星明[1,2] 金玉[1,2] 吴志军[1,2] 陈燕[1,2] 

机构地区:[1]华侨大学信息科学与工程学院,福建厦门361021 [2]厦门市移动多媒体通信重点实验室,福建厦门361021

出  处:《液晶与显示》2016年第8期773-777,共5页Chinese Journal of Liquid Crystals and Displays

基  金:国家自然科学基金资助项目(No.61404053)~~

摘  要:为了能够有效地提高电子的注入和传输能力,改善有机电致发光器件的性能,本文利用CsN_3作为n型掺杂剂,对有机电子传输材料Bphen进行n型电学掺杂,制备了结构为ITO/MoO_3(2nm)/NPB(50nm)/Alq_3(30nm)/Bphen(15nm)/Bphen∶CsN_3(15nm,x%,x=10,15,20)/Al(100nm)的器件。实验结果表明,CsN_3是一种有效的n型掺杂剂,以掺杂层Bphen∶CsN_3作为电子传输层,可以有效地降低电子的注入势垒,改善器件的电子注入和传输能力,从而降低器件的开启电压,同时提高了器件的亮度和发光效率。在掺杂浓度为10%时器件的性能最优,开启电压仅为2.3V,在7.2V的驱动电压下,达到最大亮度29 060cd/m^2,是非掺杂器件的2.5倍以上。当驱动电压为6.6V时,达到最大电流效率3.27cd/A。而当掺杂浓度进一步提高时,由于Cs扩散严重,发光区形成淬灭中心,造成器件的效率下降。To enhance the electron injecting and transporting ability and improve the performance of organic light-emitting device,the organic electron transport material Bphen was electrically doped by using CsN3 as n-type dopant in this work. The devices of ITO/MoO3 (2 nm)/NPB(50 nm)/Alq3 (30 nm)/Bphen(15 nm)/Bphen.-CsN3 (15 nm, x %,x=10,15,20)/Al(100 nm) were prepared. The ex- perimental results show that the CsNa is an effective n-type dopant. The electron injection barriers was reduced and the electron injecting and transporting ability of the device was enhanced by using the Bphen:CsN3 doped electron transport layer. As a result, the turn-on voltage was decreased, and the brightness and the luminous efficiency of the device were improved.The optimal doping concentrationof the device was 10G.The device shows a turn-on voltage of 2.3 V and the maximum luminance rea- ches 29 060 cd/m2 at 7.2 V, more than 2.5 times of that of the device without doping. The maximum current efficiency was 3.27 cd/A when the voltage was 6.6 V. When the doping concentration further increases,the efficiency of the device is decreased owning to Cs atom quenching the luminescence cen- ter induced by interdiffusion.

关 键 词:CsN3 N型掺杂 有机电致发光器件 电流效率 

分 类 号:TN383.1[电子电信—物理电子学] TN312.8

 

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