离子束辅助沉积法制备重掺N氧化铈提高其可见光吸收性能（英文）  

Enhanced Visible Light Adsorption of Heavily Nitrogen Doped CeO_2 Thin Film via Ion Beam Assisted Deposition

作　　者：郏义征[1,2] 李辉[2] 胡楠楠[3] 王清远[1] 

机构地区：[1]四川大学能源工程安全与灾害力学教育部重点实验室,四川成都610065 [2]四川建筑职业技术学院博士后创新实践基地,四川德阳618000 [3]四川建筑职业技术学院,四川德阳618000

出　　处：《稀有金属材料与工程》2016年第8期1988-1991,共4页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(11172188)

摘　　要：氧化铈是一种潜在的可见光催化材料,但是如何实现在氧化铈晶格内的N掺杂是阻碍其发展的主要原因。采用离子束辅助沉积法制备了N掺杂的氧化铈薄膜材料,该方法实现了对氧化铈薄膜的高含量N掺杂,N含量可高达25%,远远高于采用传统方法制备的氮掺杂氧化铈。N 1s的高分辨谱显示,掺杂的N替代了氧化铈中的O而实现了N在氧化铈晶格中的掺杂。XRD结果显示,氧化铈薄膜在生长过程中,N离子的轰击并没有改变氧化铈的晶体,但是改变了氧化铈薄膜表面形貌,从SEM上可以看出氧化铈表面颗粒变得细小,薄膜表面变得光滑。紫外可见吸收光谱显示,随着掺N量的增加,氧化铈的光吸收发生红移。CeO_2 is a promising material for the utilization of solar light in photocatalytic reactions. However, the major obstacle for these studies is the lack of reliable methods to incorporate the desired elements such as nitrogen into the crystal lattice of CeO_2. In the present study, a nitrogen-doped CeO_2 thin film was synthesized by IBAD technique. With this technique, the nitrogen was heavily and uniformly doped into the CeO_2 thin films. XPS analysis clearly demonstrates the greatest N concentration of 25 mol% can be doped in CeO_2 thin films which is much higher than that obtained via traditional methods. The high resolution N 1s spectrum shows that nitrogen dopants are uniformly doped into CeO_2 lattice by substituting O. The XRD results indicate ion bombardment on the growing film surface does not alter the crystal structure of the film by itself. Instead, the heavy nitrogen doping induces smaller grain size of CeO_2. The SEM images show that with the increase of N doping, the surface become smoother with smaller particle size. The heavily nitrogen doping also induces a red shift of the visible light absorbance from 380 nm to 450 nm.

关 键 词：氧化铈 氮掺杂 离子束辅助沉积 光吸收 

分 类 号：TQ133.3[化学工程—无机化工]