钛镓合掺氧化锌半导体薄膜的制备及其性能研究  

Preparation and property of titanium-gallium co-doped zinc oxide semiconductor thin film

作　　者：钟志有[1,2] 陆轴 龙路[1] 顾锦华[3] 龙浩[1] 

机构地区：[1]中南民族大学电子信息工程学院,武汉430074 [2]智能无线通信湖北省重点实验室,武汉430074 [3]中南民族大学实验教学中心,武汉430074

出　　处：《化工新型材料》2016年第8期62-65,共4页New Chemical Materials

基　　金：国家自然科学基金(11504436);湖北省自然科学基金(2015CFB364);中央高校基本科研业务费专项资金(CZW14019;CZW15045)

摘　　要：采用射频磁控溅射技术在玻璃衬底上制备钛镓合掺氧化锌(TGZO)半导体薄膜,通过XRD、XPS、四探针和透射光谱等方法测试表征,研究了衬底温度对薄膜微观结构、晶粒生长和光电综合性能的影响。结果表明:TGZO薄膜具有高度的c轴择优取向生长特性,其微观结构和光电性能与衬底温度密切相关。当衬底温度为340℃时,TGZO薄膜具有最大的织构系数(2.963)、最大的晶粒尺寸(85.7nm)、最小的微应变(0.231)、最低的电阻率(1.87×10-3Ω·cm)、最高的可见光区平均透射率(84.8%)和最大的品质因数(451.2Ω-1·cm-1)。其晶体质量和光电综合性能最佳。Titanium-gallium co-doped zinc oxide （TGZO） thin films were deposited on glass substrates by the magnetron sputtering method. The effects of substrate temperature on the microstructure, grain-growth orientation and optoelectrical properties of deposited films were investigated by XRD, XPS, four-point probe and spectrophotometer. The results indicated that the thin films all had hexagonal wurtzite structure with highly c-axis preferred orientation. The substrate temperature significantly affected the microstructure and optoelectrical properties of films. The TGZO thin film prepared at the substrate temperature of 340~C exhibited the best crystal quantity and the highest optoelectronic perform- ance,which had the maximum texture coefficient （2. 963）, the largest grain size （85.7nm）, the minimum micro-strain （0. 231）, the lowest resistivity （1.87×10-3· cm）, the highest average visible transmittance （84.8 %） and the maximum figure of merit （451.2Ω-l·cm -1）.

关 键 词：氧化锌薄膜 射频磁控溅射 微观结构 

分 类 号：TB383.2[一般工业技术—材料科学与工程]