低温漂系数共源共栅CMOS带隙基准电压源  

A Low Temperature Drift Coefficient Cascode CMOS Bandgap Voltage Reference

作　　者：邓玉斌 曾以成[1] 陈星燕 张东亮[1] 

机构地区：[1]湘潭大学微电子科学与工程系,湖南湘潭411105

出　　处：《微电子学》2016年第4期488-492,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61471310)

摘　　要：设计了一种低温漂系数的共源共栅CMOS带隙基准源,采用自偏置共源共栅结构,提高了电路的电源抑制比,降低了电路的工作电源电压。采用不同温度下从输出支路抽取不同值电流的电路结构,在低温段抽取一个正温度系数电流,在高温段再注入一个较小值的正温度系数电流,达到降低温漂系数的目的。在0.5μm CMOS工艺下,Cadence Spectre电路仿真的结果表明,温度特性得到了较大改善,在-35℃~125℃温度范围内,带隙基准源的温漂系数为1.5×10^(-6)/℃,电源抑制比为65dB。A low temperature drift coefficient CMOS bandgap voltage reference source was designed.A selfbiased cascode circuit structure was used to improve the PSRR and to cut the operating supply voltage.A circuit structure that would extract different values of current from output branch at different temperature was adopted to achieve the purpose of reducing the temperature drift coefficient.In this way,when the circuit was in the period of low temperature,apositive temperature coefficient current could be extracted from its output branch,and while the circuit was in the period of high temperature,a smaller value of positive temperature coefficient current could be injected into its output branch.Based on 0.5μm CMOS process,the circuit was simulated with Spectre of Cadence.Simulation results showed that its temperature characteristics was improved greatly,the temperature drift coefficient was 1.5 ×10^-6/℃in the temperature range from-35 ℃to 125 ℃,and the PSRR was 65 dB.

关 键 词：带隙基准电压源 共源共栅 低温漂系数 电流抽取 

分 类 号：TN432[电子电信—微电子学与固体电子学]