氧化物忆阻器材料及其阻变机理研究进展  

Research progress of oxide memristive materials and resistance switching mechanism

作　　者：殷一民[1] 程海峰[1] 刘东青[1] 张朝阳[1] 

机构地区：[1]国防科技大学新型陶瓷纤维及其复合材料重点实验室,湖南长沙410073

出　　处：《电子元件与材料》2016年第9期9-14,共6页Electronic Components And Materials

基　　金：国家自然科学基金资助(No.51502344)

摘　　要：忆阻器是目前材料和电子领域的研究前沿和热点,氧化物材料在忆阻器研究中具有重大价值。本文综述了近年来研究较多的几种典型氧化物忆阻器材料,包括TiO_2、SiO_x、HfO_x、Al_2O_3、ZnO、ZrO_2、TaOx以及ZnSnO_3等,并介绍了导电细丝机制、氧化还原机制、边界迁移机制以及相变机制等四种常见的阻变机理,展望了未来忆阻器材料研究的方向与重点。Memristor is a research frontier and hotspot in the fields of materials and electronics, and oxide materials are of great value in the research of memristors. In this paper, several typical oxide memristor materials which were studied extensively in recent years are recommended, including TiO2, SiOx, HfOx, A1203, ZnO, ZrO2, TaOx and ZnSnO3. Four kinds of common resistance switching mechanisms, including the conductive filaments mechanism, the redox mechanism, the boundary migration mechanism and the phase transformation mechanism, are introduced. Finally, the prospects of further research on memristive materials are discussed.

关 键 词：氧化物材料 忆阻器 综述 阻变层 忆阻效应 阻变机理 

分 类 号：TN604[电子电信—电路与系统] TM54[电气工程—电器]