X波段大相位高低通移相器MMIC的设计与实现  

Design and Implementation of X-Band Large Bit High-Low Pass Phase Shifter MMICs

作　　者：王琦[1] 孙朋朋[1] 张蓉[1] 耿苗[1] 刘辉[1] 罗卫军[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2016年第9期669-673,共5页Semiconductor Technology

摘　　要：基于WIN 0.25μm Ga As赝配高电子迁移率晶体管（PHEMT）工艺,针对大相位移相器容易在宽带情形下出现的性能恶化问题,采用ADS2014仿真软件,成功设计并实现了两款大相位（90°和180°）的X波段（8-12 GHz）宽带数字移相器电路,其拓扑形式为高低通结构,并采用奇偶模分析方法,对高低通滤波网络进行分析。最终在片测试结果表明,其获得了优良的宽带性能,且与仿真结果相吻合。该设计90°移相器电路在频带内相位误差为-3.7°-0°,插入损耗优于2.15 d B,回波损耗优于19 d B;180°移相器电路在频带内相位精度为-6.2°-2°,插入损耗优于2.65 d B,回波损耗优于17 d B。该移相器在相对带宽为40%的X波段内取得良好的插入损耗与回波特性,适用于频带较宽的多位级联数字移相器中。Based on the WIN 0.25 μm GaAs pseudomorphic high electron mobility transistor （PHEMT） technology, to solve the problem that the performance of large bit phase shifters deteriorate readily in case of broadband, two large bit （90°and 180°） X-band （8-12 GHz） broadband phase shifters were designed and realized by adopting the high-low pass topology in ADS2014 simulation soft- ware. The high-low pass filter network was analyzed by the odd-and-even-mode analysis method. The measured results exhibit that the outstanding broadband performance is obtained, and it shows excellent agreement between simulation and measurement. The 90° phase shifter circuit obtains a phase error of -3.7°-0°, the insertion loss is better than 2.15 dB and the return loss is better than 19 dB, while the 180° phase shifter circuit obtains a phase error of -6.2°-2°, the insertion loss is better than 2.65 dB and the return loss is better than 17 dB. The phase shifters show a good insertion loss and return loss in X-band （40%）, which can be employed into the wide bandwidth multi-bit digital phase shifter.

关 键 词：数字移相器 高低通 单刀双掷(SPDT)开关 Ga As赝配高电子迁移率晶体管(PHEMT) X波段 

分 类 号：TN454[电子电信—微电子学与固体电子学] TN623