保温时间对定向凝固法提纯多晶硅的影响  

Influence of Soaking Time on Polycrystalline Silicon Purification during Directional Solidification

作　　者：林涛[1,2] 孙艳辉[1,2] 段春艳[1,2] 章大钧[1,2] 

机构地区：[1]佛山职业技术学院电子信息系,广东佛山528137 [2]华南师范大学化学与环境学院,广东广州510006

出　　处：《材料科学与工程学报》2016年第4期643-646,672,共5页Journal of Materials Science and Engineering

基　　金：广东省高等职业教育教学改革立项资助项目(20130301002)

摘　　要：本文采用#3303工业硅作为定向凝固的原料提纯多晶硅锭。实验过程中保持拉锭速度和冷却水流量为常数,并分别以不同的保温时间作为试验参数进行实验。采用金相显微镜(Metalloscope)和扫描电子显微镜(SEM)对硅锭微观形貌进行表征,结果显示,硅锭的底部杂质含量最少。定向凝固过程中杂质从硅锭的底部朝着硅锭的顶部方向聚集。用电感耦合等离子体原子发射光谱法(ICP-AES)对硅锭杂质含量进行分析,结果显示,效果最好的实验保温时间是30分钟,并由此可以推断保温时间越长,硅锭中的杂质含量越少。#3303 industrial silicon was used as raw material for directional solidification. The directive solidification was performed by keepingcooling rate and cooling water flux constant and leaving soaking time as a changing parameter. Microstructures of the silicon ingots were characterized by metalloscope, scanning electron microscope. The result shows that the bottom of the silicon ingots is the smoothest region, indicating that the impurities are separated from the bottom to the upper part of the silicon ingots during the directional solidification. Impurities content was analyzed by ICP-AES. It is found that the most effective solidification is under the condition of holding time at 30min. It infers that the longer soking the time, the more effective the directional solidification becomes.

关 键 词：保温时间 定向凝固 多晶硅 提纯 

分 类 号：TN304[电子电信—物理电子学]