电化学沉积法制备Cu2ZnSnS4薄膜电池  

Fabrication of Cu_2ZnSnS_4 Solar Cell by Electrodeposition

作　　者：杨敏[1] 蒋志[1] 李志山[1] 刘涛[1] 刘思佳[1] 郝瑞亭[1] 王书荣[1] 

机构地区：[1]云南师范大学太阳能研究所,教育部可再生能源材料先进技术与制备重点实验室,云南省农村能源重点工程实验室,云南昆明650500

出　　处：《材料科学与工程学报》2016年第4期651-655,共5页Journal of Materials Science and Engineering

基　　金：国家科技合作重点资助项目(2011DFA62380);国家自然科学基金资助项目(61176127);国家自然科学基金资助项目(61167003)

摘　　要：采用简单的两电极电化学沉积金属薄膜技术,在镀钼的钠钙玻璃衬底上共沉积Cu-Sn层后,再沉积Zn金属层,制备出Cu-Sn-Zn金属预制层。在不同的温度下进行低温退火后,以硫粉作为硫源高温硫化金属预制层,制备出晶体质量较好的Cu2ZnSnS4(CZTS)薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)对薄膜的晶体结构、表面形貌和薄膜组分进行分析表征,发现共沉积Cu-Sn层,再沉积Zn金属层得到的CZT预制层表面平整但晶粒尺寸较小,经过退火处理后晶粒尺寸得到改善,且硫化后所得到的CZTS薄膜不易从Mo衬底上脱落,粘附性较强。用其制备的CZTS薄膜太阳电池的开路电压Voc=569mV,短路电流密度Jsc=8.58mA/cm2,光电转换效率为1.40%。Cu-Sn-Zn metal precursors were prepared on Mo-coated soda lime glass by using simple two- electrode mode deposition method. Here, the electrodeposition order was Cu-Sn co-deposition and Zn deposition. Prior to sulfurization, the precursors were soft annealed under different temperatures. CZTS thin films with good crystallinity were fabricated by high temperature annealing under sulfur vapor atmosphere. The crystal structure, surface morphology and composition of the films were characterized by X-ray diffraction （XRD）, scanning electron microscope （SEM） and energy dispersive spectrometry （EDS）, respectively. It was found that the deposited CZT precursors had smooth surface, but the grain size was small. After soft annealing, grain size increased and the sulfurized CZTS showed good adhesion with Mo substrate. The best conversion efficiency of the fabricated CZTS film solar cell was 1.40% with open-circuit voltage （Voc）= 569mV, short-circuit current density （Jsc） = 8. 58mA/cm^2.

关 键 词：铜锌锡硫(CZTS) 薄膜太阳电池 电化学沉积 转换效率 

分 类 号：TK51[动力工程及工程热物理—热能工程]